Invention Grant
- Patent Title: Magnetic memory cell and method of manufacturing the same
- Patent Title (中): 磁记忆体及其制造方法
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Application No.: US14724530Application Date: 2015-05-28
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Publication No.: US09337419B2Publication Date: 2016-05-10
- Inventor: Eiji Kariyada , Katsumi Suemitsu
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-052070 20120308
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L43/12 ; H01L43/10 ; H01L43/14 ; H01L43/08 ; H01L27/22
Abstract:
A method of manufacturing a magnetic memory cell, includes forming a tunnel barrier layer over a first magnetic layer, forming a second magnetic layer over the tunnel barrier layer, forming a mask over the second magnetic layer, etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer, and forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer.
Public/Granted literature
- US20150263276A1 MAGNETIC MEMORY CELL AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-09-17
Information query
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