Invention Grant
- Patent Title: Magnetoresistive tunnel junction
- Patent Title (中): 磁阻隧道结
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Application No.: US13675344Application Date: 2012-11-13
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Publication No.: US09337424B2Publication Date: 2016-05-10
- Inventor: Chwen Yu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L43/08

Abstract:
A Magnetoresistive Tunnel Junction (MTJ) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode. The surface area of the free layer is less than the surface area of the reference layer.
Public/Granted literature
- US20140131652A1 MAGNETORESISTIVE TUNNEL JUNCTION Public/Granted day:2014-05-15
Information query
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