Invention Grant
- Patent Title: High frequency module
- Patent Title (中): 高频模块
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Application No.: US14688029Application Date: 2015-04-16
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Publication No.: US09337797B2Publication Date: 2016-05-10
- Inventor: Hideki Muto
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2012-229671 20121017
- Main IPC: H03H7/01
- IPC: H03H7/01 ; H03F3/19 ; H05K1/02 ; H03F3/21 ; H03F1/56 ; H03F3/195 ; H04B1/18 ; H05K1/16 ; H03H1/00

Abstract:
A high frequency module includes a multilayer substrate, a power amplifier, thermal vias, and a bandpass filter. The power amplifier is mounted on the multilayer substrate. The thermal vias are provided in the multilayer substrate directly below the power amplifier and configured to dissipate heat of the power amplifier. The bandpass filter is provided in the multilayer substrate and connected to the power amplifier. The thermal via defines an inductor included in the bandpass filter. The bandpass filter overlaps the power amplifier when viewed in a lamination direction of the multilayer substrate.
Public/Granted literature
- US20150223319A1 HIGH FREQUENCY MODULE Public/Granted day:2015-08-06
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