Invention Grant
US09338886B2 Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device
有权
用于安装半导体的衬底，半导体器件和用于制造半导体器件的方法
- Patent Title: Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 用于安装半导体的衬底，半导体器件和用于制造半导体器件的方法
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Application No.: US14295528Application Date: 2014-06-04
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Publication No.: US09338886B2Publication Date: 2016-05-10
- Inventor: Toshiki Furutani , Daiki Komatsu , Masatoshi Kunieda , Naomi Fujita , Nobuya Takahashi
- Applicant: IBIDEN CO., LTD.
- Applicant Address: JP Ogaki-shi
- Assignee: IBIDEN CO., LTD.
- Current Assignee: IBIDEN CO., LTD.
- Current Assignee Address: JP Ogaki-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H05K1/11 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L23/498 ; H01L21/48 ; H01L23/14 ; H01L23/28 ; H05K1/02
Abstract:
A substrate for mounting a semiconductor includes a first insulation layer having first and second surfaces on the opposite sides and having a penetrating hole penetrating through the first insulation layer, an electrode formed in the penetrating hole in the first insulation layer and having a protruding portion protruding from the second surface of the first insulation layer, a first conductive pattern formed on the first surface of the first insulation layer and connected to the electrode, a second insulation layer formed on the first surface of the first insulation layer and the first conductive pattern and having a penetrating hole penetrating through the second insulating layer, a second conductive pattern formed on the second insulation layer and for mounting a semiconductor element, and a via conductor formed in the penetrating hole in the second insulation layer and connecting the first and second conductive patterns.
Public/Granted literature
Information query
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