Invention Grant
- Patent Title: Interposer substrate and method of fabricating the same
- Patent Title (中): 内插衬底及其制造方法
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Application No.: US14541688Application Date: 2014-11-14
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Publication No.: US09338900B2Publication Date: 2016-05-10
- Inventor: Pao-Hung Chou , Shih-Ping Hsu , Che-Wei Hsu
- Applicant: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- Applicant Address: TW Hukou Township, Hsinchu County
- Assignee: Phoenix Pioneer Technology Co., Ltd.
- Current Assignee: Phoenix Pioneer Technology Co., Ltd.
- Current Assignee Address: TW Hukou Township, Hsinchu County
- Agency: Steptoe & Johnson LLP
- Priority: TW103131118A 20140910
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H05K3/46 ; H01L21/48

Abstract:
A method of fabricating an interposer substrate is provided, including: providing a carrier having a first wiring layer and a plurality of conductive pillars disposed on the first wiring layer; forming a first insulating layer on the carrier, with the conductive pillars being exposed from the first insulating layer; forming a second wiring layer on the first insulating layer and the conductive pillars; disposing a plurality of external connection pillars on the second wiring layer; forming a second insulating layer on the first insulating layer, with the external connection pillars being exposed from the second insulating layer; forming at least a trench on the second insulating layer; and removing the carrier. Through the formation of the interposer substrate, which does not have a core layer, on the carrier, a via process is omitted. Therefore, the method is simple, and the interposer substrate thus fabricated has a low cost. The present invention further provides the interposer substrate.
Public/Granted literature
- US20160073516A1 INTERPOSER SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-03-10
Information query
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