Invention Grant
- Patent Title: Method of processing a substrate
- Patent Title (中): 处理基板的方法
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Application No.: US14247274Application Date: 2014-04-08
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Publication No.: US09339868B2Publication Date: 2016-05-17
- Inventor: Joerg Ortner , Michael Sorger
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: B22D19/00
- IPC: B22D19/00 ; H01L21/02 ; H01L21/768 ; H01L21/311 ; H01L21/48 ; H01L23/00 ; G03F7/00 ; B82Y10/00 ; B82Y40/00 ; H05K1/02
Abstract:
In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, a stamp device may be disposed at least in the trench; at least one part of the trench that is free from the stamp device may be at least partially filled with trench filling material; and the stamp device may be removed from the trench.
Public/Granted literature
- US20140216677A1 METHOD OF PROCESSING A SUBSTRATE Public/Granted day:2014-08-07
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