Invention Grant
- Patent Title: Process kit shield for plasma enhanced processing chamber
- Patent Title (中): 用于等离子体增强处理室的工艺套件屏蔽
-
Application No.: US14178146Application Date: 2014-02-11
-
Publication No.: US09343274B2Publication Date: 2016-05-17
- Inventor: Muhammad Rasheed , Donny Young , Kirankumar Savandaiah , Uday Pai
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: C23C14/56
- IPC: C23C14/56 ; C23C14/34 ; C23C16/44 ; C23C14/35 ; H01J37/34 ; H01J37/32 ; H01J19/54
Abstract:
Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.
Public/Granted literature
- US20140158049A1 PROCESS KIT SHIELD FOR PLASMA ENHANCED PROCESSING CHAMBER Public/Granted day:2014-06-12
Information query
IPC分类:
