Invention Grant
- Patent Title: Methods for fabricating damascene write poles using ruthenium hard masks
- Patent Title (中): 使用钌硬掩模制造镶嵌写柱的方法
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Application No.: US12535645Application Date: 2009-08-04
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Publication No.: US09346672B1Publication Date: 2016-05-24
- Inventor: Jinqiu Zhang
- Applicant: Jinqiu Zhang
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00 ; B82Y10/00 ; B82Y25/00 ; G11B5/31
Abstract:
A method for forming a write pole comprises the steps of providing a structure comprising a substrate layer, a ruthenium layer over the substrate layer, and a tantalum layer over the ruthenium layer, providing an opening in the tantalum layer over a portion of the ruthenium layer, performing a first reactive ion etching step on the portion of the ruthenium layer under the opening in the tantalum layer to provide an opening in the ruthenium layer over a portion of the substrate layer, performing a second reactive ion etching step on the portion of the substrate layer under the opening in the ruthenium layer to form a damascene trench therein, and filling the damascene trench with a magnetic material to form the write pole.
Information query
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