Invention Grant
- Patent Title: Method for growing epitaxial diamond
- Patent Title (中): 生长外延金刚石的方法
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Application No.: US13940792Application Date: 2013-07-12
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Publication No.: US09347149B2Publication Date: 2016-05-24
- Inventor: Li Chang , Ping-Hsun Wu , Kun-An Chiu
- Applicant: National Chiao Tung University
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL CHIAO TUNG UNIVERSITY
- Current Assignee: NATIONAL CHIAO TUNG UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe PC
- Priority: TW101143227A 20121120
- Main IPC: C30B29/04
- IPC: C30B29/04 ; C30B25/18

Abstract:
A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.
Public/Granted literature
- US20140137795A1 METHOD FOR GROWING EPITAXIAL DIAMOND Public/Granted day:2014-05-22
Information query
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