Methods and systems for determining a meta-model to correct model based measurements are presented. Such systems are employed to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with different semiconductor fabrication processes. In one aspect, model-based measurement parameter values are corrected based on a meta-model that maps specimen parameter values determined based on the measurement model to reference parameter values determined based on a more accurate reference measurement. In another aspect, parameters of a meta-model are determined such that errors between reference parameter values and specimen parameter values determined based on the measurement model are minimized. In some embodiments, the accuracy of a corrected parameter value is an order of magnitude greater than the uncorrected parameter value.