Invention Grant
US09349340B2 Thin-film transistor substrate, display device provided with same, and method for producing thin-film transistor substrate
有权
薄膜晶体管基板，具备该薄膜晶体管基板的显示装置及薄膜晶体管基板的制造方法
- Patent Title: Thin-film transistor substrate, display device provided with same, and method for producing thin-film transistor substrate
- Patent Title (中): 薄膜晶体管基板，具备该薄膜晶体管基板的显示装置及薄膜晶体管基板的制造方法
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Application No.: US13882938Application Date: 2011-11-08
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Publication No.: US09349340B2Publication Date: 2016-05-24
- Inventor: Masaki Saitoh , Naoki Makita
- Applicant: Masaki Saitoh , Naoki Makita
- Applicant Address: JP Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Agency: Chen Yoshimura LLP
- Priority: JP2010-255263 20101115
- International Application: PCT/JP2011/006226 WO 20111108
- International Announcement: WO2012/066745 WO 20120524
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G09G3/36 ; H03K17/06
Abstract:
In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.
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