Invention Grant
US09349406B2 Combining features using directed self-assembly to form patterns for etching
有权
使用定向自组装来组合特征以形成用于蚀刻的图案
- Patent Title: Combining features using directed self-assembly to form patterns for etching
- Patent Title (中): 使用定向自组装来组合特征以形成用于蚀刻的图案
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Application No.: US14621299Application Date: 2015-02-12
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Publication No.: US09349406B2Publication Date: 2016-05-24
- Inventor: Rene Johannes Marinus Van de Veerdonk
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F3/00 ; G11B5/84 ; C25F3/00 ; C23F4/00
Abstract:
Provided herein is a method, including etching a first pattern into a mask, wherein the first pattern includes a first set of features corresponding to features of an imprint template; forming a second set of features over and in-between the first set of features by directed self-assembly of a block copolymer composition, wherein the first and second sets of features combine to form a second pattern; and etching the second pattern into a substrate.
Public/Granted literature
- US20150154997A1 COMBINING FEATURES USING DIRECTED SELF-ASSEMBLY TO FORM PATTERNS FOR ETCHING Public/Granted day:2015-06-04
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