A semiconductor device includes a driving signal generation unit configured to selectively drive a sub word line driving signal in response to a sub word line select signal. The semiconductor device also includes a sub word line driving unit configured to drive a sub word line in response to a main word line select signal and the sub word line driving signal. Further, the semiconductor device includes leakage path blocking unit configured to block a leakage path formed from the sub word line through the driving signal generation unit, in response to a test signal.