A plurality of word lines extend in a first direction and are disposed in a second direction and a third direction. A plurality of bit lines extend in the third direction and are disposed in the first direction and the second direction. A global bit line is coupled in common to the plurality of bit lines. A selection elements is disposed between the bit line and the global bit line. A control circuit is able to perform respective operations of reading, writing, and deletion on the storage element. A resistive element is disposed on the global bit line side with respect to the selection element. The resistive element adjusts a magnitude of a voltage to be applied to the selection element according to a magnitude of a current flowing through the selection element.