Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium
- Patent Title (中): 制造半导体器件，衬底处理设备，衬底处理系统和非暂时性计算机可读记录介质的方法
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Application No.: US14219345Application Date: 2014-03-19
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Publication No.: US09349586B2Publication Date: 2016-05-24
- Inventor: Satoshi Shimamoto , Takaaki Noda , Takeo Hanashima , Yoshiro Hirose , Hiroshi Ashihara , Tsukasa Kamakura , Shingo Nohara
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan LLC
- Priority: JP2013-057173 20130319; JP2014-020046 20140205; JP2014-025790 20140213
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/30 ; C23C16/455 ; C23C16/56 ; H01L21/67
Abstract:
A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CxHy-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.
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