Invention Grant
- Patent Title: Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film
- Patent Title (中): 钌络合物,其制造方法以及含钌薄膜的制造方法
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Application No.: US14650274Application Date: 2013-12-06
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Publication No.: US09349601B2Publication Date: 2016-05-24
- Inventor: Kenichi Tada , Toshiki Yamamoto , Hiroyuki Oike , Atsushi Maniwa , Hirokazu Chiba , Kohei Iwanaga , Kazuhisa Kawano
- Applicant: TOSOH CORPORATION , SAGAMI CHEMICAL RESEARCH INSTITUTE
- Applicant Address: JP Shunan JP Ayase
- Assignee: TOSOH CORPORATION,SAGAMI CHEMICAL RESEARCH INSTITUTE
- Current Assignee: TOSOH CORPORATION,SAGAMI CHEMICAL RESEARCH INSTITUTE
- Current Assignee Address: JP Shunan JP Ayase
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2012-268396 20121207; JP2013-133480 20130626; JP2013-156294 20130729
- International Application: PCT/JP2013/082889 WO 20131206
- International Announcement: WO2014/088108 WO 20140612
- Main IPC: C07F15/00
- IPC: C07F15/00 ; H01L21/285 ; C23C16/18 ; C07F7/02 ; H01L21/768

Abstract:
The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein R1a to R7a, R8, R9 and R10 to R18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.
Public/Granted literature
- US20150303063A1 RUTHENIUM COMPLEX, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM Public/Granted day:2015-10-22
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