Invention Grant
US09349646B2 Wafer processing method including a filament forming step and an etching step
有权
晶圆加工方法,包括长丝形成步骤和蚀刻步骤
- Patent Title: Wafer processing method including a filament forming step and an etching step
- Patent Title (中): 晶圆加工方法,包括长丝形成步骤和蚀刻步骤
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Application No.: US14185189Application Date: 2014-02-20
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Publication No.: US09349646B2Publication Date: 2016-05-24
- Inventor: Hiroshi Morikazu , Noboru Takeda
- Applicant: Disco Corporation
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2013-041019 20130301
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; B23K26/00 ; B23K26/06

Abstract:
A wafer processing method for dividing a wafer along a plurality of division lines to obtain a plurality of individual chips. The wafer processing method includes a filament forming step of applying a pulsed laser beam having a transmission wavelength to the wafer along each division line in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area to be divided, thereby forming a plurality of amorphous filaments inside the wafer along each division line, and an etching step of etching the amorphous filaments formed inside the wafer along each division line by using an etching agent to thereby divide the wafer into the individual chips along the division lines.
Public/Granted literature
- US20140248757A1 WAFER PROCESSING METHOD Public/Granted day:2014-09-04
Information query
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