Invention Grant
- Patent Title: Substrate, method of manufacturing substrate, semiconductor device, and electronic apparatus
- Patent Title (中): 基板，基板的制造方法，半导体装置以及电子设备
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Application No.: US13929218Application Date: 2013-06-27
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Publication No.: US09349673B2Publication Date: 2016-05-24
- Inventor: Tsuyoshi Yoda
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2012-150345 20120704
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H05K1/02
Abstract:
A substrate includes a first insulating layer provided on a base board, a second insulating layer provided on the first insulating layer, a third insulating layer provided on the second insulating layer, a pad electrode provided on the third insulating layer, and a hole formed to penetrate the substrate and reaching the pad electrode. A diameter of the hole in the first insulating layer is larger than a diameter of the hole in the second insulating layer, and the first insulating layer and the second insulating layer are formed using different materials from each other and the second insulating layer and the third insulating layer are formed using different materials from each other.
Public/Granted literature
- US20140008816A1 SUBSTRATE, METHOD OF MANUFACTURING SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2014-01-09
Information query
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