Invention Grant
- Patent Title: Method for manufacturing high-strength structural stacked capacitor
- Patent Title (中): 高强度结构堆叠电容器的制造方法
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Application No.: US14228727Application Date: 2014-03-28
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Publication No.: US09349736B2Publication Date: 2016-05-24
- Inventor: Hai-Han Hung , Yi-Ren Lin
- Applicant: INOTERA MEMORIES, INC.
- Applicant Address: TW Taoyuan County
- Assignee: Inotera Memories, Inc.
- Current Assignee: Inotera Memories, Inc.
- Current Assignee Address: TW Taoyuan County
- Agency: Rosenberg, Klein & Lee
- Priority: TW102146144A 20131213
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/108 ; H01L49/02 ; H01L21/768

Abstract:
The instant disclosure relates to a method for manufacturing high-strength structural stacked capacitor. The novel feature of the instant disclosure is forming a part of upper electrode layer to cover the first/outer surface of each of the lower electrode layers before removing the sacrificial layer, and forming another part of upper electrode layer to cover the second/inner surface of each of the lower electrode layers after removing the sacrificial layer. Hence, the structure strength of the lower electrode layer in all process steps has been improved.
Public/Granted literature
- US20150171088A1 METHOD FOR MANUFACTURING HIGH-STRENGTH STRUCTURAL STACKED CAACITOR Public/Granted day:2015-06-18
Information query
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