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US09349772B2 Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM 有权
用自旋转矩传递磁性随机存取存储器（STT-MRAM）制造集成电路的方法包括沿着STT-MRAM的磁性隧道结的侧壁形成的钝化层

Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM
Abstract:
A method of fabricating an integrated circuit includes depositing a bottom electrode layer, an MTJ layer, and a top electrode layer over a passivation layer and within a trench of the passivation layer and removing portions of the MTJ layer and the top electrode layer to form an MTJ/top electrode stack over the bottom electrode layer and at least partially within portions of the trench having being reopened by said removing. The method further includes forming a further passivation layer over the MTJ/top electrode stack, forming a further ILD layer of the further passivation layer, and reforming a top electrode layer over the ILD layer and over the MTJ/top electrode stack. Still further, the method includes removing portions of the bottom electrode layer, the further passivation layer, the further ILD layer, and the re-formed top electrode layer to form a bottom electrode/MTJ/top electrode stack.
Abstract(Chinese):

一种制造集成电路的方法包括在钝化层上方和钝化层的沟槽内沉积底部电极层，MTJ层和顶部电极层，并且去除MTJ层和顶部电极层的部分以形成 MTJ /顶部电极堆叠在底部电极层上方，并且至少部分地在沟槽的部分内被所述去除重新打开。 该方法还包括在MTJ /顶部电极堆叠上形成另外的钝化层，形成另外的钝化层的另外的ILD层，以及在ILD层上和MTJ /顶部电极堆叠上重整顶部电极层。 此外，该方法包括去除底部电极层，另外的钝化层，另外的ILD层和重新形成的顶部电极层的部分，以形成底部电极/ MTJ /顶部电极堆叠。

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