Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14028969Application Date: 2013-09-17
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Publication No.: US09349858B2Publication Date: 2016-05-24
- Inventor: HeeDon Hwang , JuEun Kim , KiHong Nam , BongHyun Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0102906 20120917
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/51 ; H01L21/28 ; H01L29/423 ; H01L29/49
Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device comprises a first trench formed in a substrate; a first insulating film formed on sidewalls and a bottom surface of the first trench and not formed on a top surface of the substrate; and a first conductive film formed on the first insulating film to partially fill the first trench, wherein the first insulating film comprises a first portion which overlaps the first conductive film and a second portion which does not overlap the first conductive film, wherein the second portion comprises first fixed charges.
Public/Granted literature
- US20140077294A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-03-20
Information query
IPC分类:
