Invention Grant
- Patent Title: Semiconductor light-emitting device with a protection layer and the manufacturing method thereof
- Patent Title (中): 具有保护层的半导体发光器件及其制造方法
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Application No.: US14293825Application Date: 2014-06-02
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Publication No.: US09349909B2Publication Date: 2016-05-24
- Inventor: Chiu-Lin Yao , Chih-Chiang Lu
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW098146164A 20091230
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/10 ; H01L33/44 ; H01L33/64 ; H01L25/075 ; H01L33/62

Abstract:
The present application discloses a method for making a light-emitting device comprising steps of: providing a light-emitting unit comprising an epitaxial structure; providing a protection layer; connecting the light-emitting unit with the protection layer by a second connecting layer; providing a heat dispersion substrate; and connecting the heat dispersion substrate with the protection layer by a first connecting layer.
Public/Granted literature
- US20140273320A1 Semiconductor Light-Emitting Device with a Protection Layer and the Manufacturing Method Thereof Public/Granted day:2014-09-18
Information query
IPC分类: