Invention Grant
- Patent Title: Single-step-grown transversely coupled distributed feedback laser
- Patent Title (中): 单步生长横向耦合分布反馈激光器
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Application No.: US14182335Application Date: 2014-02-18
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Publication No.: US09350138B2Publication Date: 2016-05-24
- Inventor: Alexey Gubenko , Daniil Livshits , Sergey Mikhrin , Igor Krestnikov
- Applicant: Innolume GmbH
- Applicant Address: DE Dortmund
- Assignee: Innolume GmbH
- Current Assignee: Innolume GmbH
- Current Assignee Address: DE Dortmund
- Agency: Brown & Michaels, PC
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/125 ; H01S5/22 ; H01S5/12 ; H01S5/187 ; H01S5/02 ; H01S5/343 ; H01S5/026 ; H01S5/0625 ; H01S5/10 ; H01S5/30

Abstract:
A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.
Public/Granted literature
- US20150280402A1 Single-Step-Grown Transversely Coupled Distributed Feedback Laser Public/Granted day:2015-10-01
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