Invention Grant
- Patent Title: Power management multi-chip module with separate high-side driver integrated circuit die
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Application No.: US14664850Application Date: 2015-03-21
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Publication No.: US09350245B2Publication Date: 2016-05-24
- Inventor: Steven Huynh , Tsing Hsu
- Applicant: Active-Semi, Inc.
- Applicant Address: VG
- Assignee: Active-Semi, Inc.
- Current Assignee: Active-Semi, Inc.
- Current Assignee Address: VG
- Agency: Imperium Patent Works
- Agent T. Lester Wallace
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H02M3/158 ; H02P6/08 ; H02M7/5387 ; H02P6/14

Abstract:
A packaged device includes a first die, a second die, and specially spaced and positioned sets of package terminals. The first die includes a pulse-width modulator (PWM), a processor, a timer, high-side drivers, low-side drivers, and a fault protection circuit. The second die includes ultra-high voltage high-side drivers. In an ultra-high voltage application, the PWM and external circuitry together form a switching power supply that generates a high voltage. The high voltage powers external high-side transistors. The processor and timer control the ultra-high voltage high-side drivers, that in turn supply drive signals to the external high-side transistors through the package terminals. External low-side transistors are driven directly by low-side drivers of the first die. If the fault protection circuit detects an excessive current, then the fault protection circuit supplies a disable signal to high-side and low-side drivers of both dice. The disable signal is generated without execution of processor instructions.
Public/Granted literature
- US20150194893A1 Power Management Multi-Chip Module With Separate High-Side Driver Integrated Circuit Die Public/Granted day:2015-07-09
Information query
IPC分类: