Invention Grant
- Patent Title: Modulation circuit and semiconductor device including the same
- Patent Title (中): 调制电路和包括其的半导体器件
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Application No.: US12948225Application Date: 2010-11-17
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Publication No.: US09350295B2Publication Date: 2016-05-24
- Inventor: Koichiro Kamata
- Applicant: Koichiro Kamata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratoty Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratoty Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-265054 20091120
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H03C1/36

Abstract:
A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
Public/Granted literature
- US20110121911A1 MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2011-05-26
Information query
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