Invention Grant
US09350354B2 PUF circuit based on ZTC point of MOSFET 有权
基于MOSFET的ZTC点的PUF电路

PUF circuit based on ZTC point of MOSFET
Abstract:
A physical unclonable function (PUF) circuit based on a zero temperature coefficient (ZTC) point of a metal oxide semiconductor field effect transistor (MOSFET), the PUF circuit including at least one PUF circuit unit. Each PUF circuit unit includes: a deviation signal generating circuit module, a signal selection circuit, and a comparison output circuit. The deviation signal generating circuit module includes two deviation signal generating circuits. A control voltage input terminal of the deviation signal generating circuit is supplied with a control voltage, and the control voltage enables a first NMOS, a second NMOS, a third NMOS, a fourth NMOS, a fifth NMOS, a sixth NMOS, a seventh NMOS, and an eighth NMOS to work at a ZTC point.
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