Invention Grant
- Patent Title: PUF circuit based on ZTC point of MOSFET
- Patent Title (中): 基于MOSFET的ZTC点的PUF电路
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Application No.: US14709462Application Date: 2015-05-11
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Publication No.: US09350354B2Publication Date: 2016-05-24
- Inventor: Pengjun Wang , Xuelong Zhang , Yuejun Zhang
- Applicant: Ningbo University
- Applicant Address: CN Ningbo
- Assignee: Ningbo University
- Current Assignee: Ningbo University
- Current Assignee Address: CN Ningbo
- Agency: Matthias Scholl, PC
- Agent Matthias Scholl
- Priority: CN201410467756 20140915
- Main IPC: H03K19/0948
- IPC: H03K19/0948

Abstract:
A physical unclonable function (PUF) circuit based on a zero temperature coefficient (ZTC) point of a metal oxide semiconductor field effect transistor (MOSFET), the PUF circuit including at least one PUF circuit unit. Each PUF circuit unit includes: a deviation signal generating circuit module, a signal selection circuit, and a comparison output circuit. The deviation signal generating circuit module includes two deviation signal generating circuits. A control voltage input terminal of the deviation signal generating circuit is supplied with a control voltage, and the control voltage enables a first NMOS, a second NMOS, a third NMOS, a fourth NMOS, a fifth NMOS, a sixth NMOS, a seventh NMOS, and an eighth NMOS to work at a ZTC point.
Public/Granted literature
- US20160079982A1 PUF CIRCUIT BASED ON ZTC POINT OF MOSFET Public/Granted day:2016-03-17
Information query
IPC分类: