Invention Grant
US09355699B2 Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM)
有权
电压控制磁各向异性（VCMA）开关和磁电记忆（MERAM）
- Patent Title: Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM)
- Patent Title (中): 电压控制磁各向异性（VCMA）开关和磁电记忆（MERAM）
-
Application No.: US14968195Application Date: 2015-12-14
-
Publication No.: US09355699B2Publication Date: 2016-05-31
- Inventor: Pedram Khalili Amiri , Kang L. Wang , Kosmas Galatsis
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: O'Banion & Ritchey LLP
- Agent John P. O'Banion
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/02 ; H01L43/08
Abstract:
Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
Public/Granted literature
- US20160099035A1 VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY (VCMA) SWITCH AND MAGNETO-ELECTRIC MEMORY (MERAM) Public/Granted day:2016-04-07
Information query
