Invention Grant
- Patent Title: Read circuit for memory
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Application No.: US14608683Application Date: 2015-01-29
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Publication No.: US09355700B2Publication Date: 2016-05-31
- Inventor: Jonathan Z. Sun , John K. DeBrosse , Po-Kang Wang
- Applicant: International Business Machines Corporation , Headway Technologies, Inc.
- Applicant Address: US NY Armonk US CA Milpitas
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,HEADWAY TECHNOLOGIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,HEADWAY TECHNOLOGIES, INC.
- Current Assignee Address: US NY Armonk US CA Milpitas
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C11/14 ; G11C11/15 ; G11C29/04

Abstract:
Embodiments are directed to detecting a state of a memory element in a memory device, comprising: applying a pulse of a predetermined magnitude and duration to the memory element to induce a transition in the state of the memory element when a polarity of the pulse is opposite to the state, monitoring, by a device, a signal associated with the memory element to detect a presence or absence of a transition in the signal in an amount greater than a threshold, and determining the state of the memory element based on said monitoring.
Public/Granted literature
- US20150138879A1 READ CIRCUIT FOR MEMORY Public/Granted day:2015-05-21
Information query