Invention Grant
US09355866B2 Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
有权
基板处理装置，半导体装置的制造方法以及非暂时性的计算机可读记录介质
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
- Patent Title (中): 基板处理装置，半导体装置的制造方法以及非暂时性的计算机可读记录介质
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Application No.: US14669764Application Date: 2015-03-26
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Publication No.: US09355866B2Publication Date: 2016-05-31
- Inventor: Atsuhiko Suda , Satoshi Shimamoto , Naofumi Ohashi
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Elecetric, Inc.
- Current Assignee: Hitachi Kokusai Elecetric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan LLC
- Priority: JP2014-199910 20140930; JP2015-032843 20150223
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; C23C16/52 ; C23C16/46 ; C23C16/458 ; C23C16/455 ; C23C16/34 ; H01L21/033 ; H01L21/02
Abstract:
Provided is a configuration capable of suppressing a variation in characteristics of transistor. The configuration includes: a process chamber; a gas supply unit configured to supply a hard mask forming gas into the process chamber; a substrate support table configured to support a substrate Wn of an nth lot having a film to be etched formed thereon; a heater embedded in the substrate support table; and a controller configured to control a temperature distribution of the heater based on an etching information of a substrate Wm of an mth lot processed prior to the nth lot.
Public/Granted literature
Information query
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