Invention Grant
- Patent Title: Conformal film deposition for gapfill
- Patent Title (中): 用于间隙填充的保形膜沉积
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Application No.: US14074596Application Date: 2013-11-07
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Publication No.: US09355886B2Publication Date: 2016-05-31
- Inventor: Shankar Swaminathan , Bart van Schravendijk , Adrien LaVoie , Sesha Varadarajan , Jason Daejin Park , Michal Danek , Naohiro Shoda
- Applicant: Novellus Systems, Inc.
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/762 ; H01L21/67 ; H01L21/02 ; C23C16/04 ; C23C16/455 ; C23C16/56
Abstract:
A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.
Public/Granted literature
- US20140134827A1 CONFORMAL FILM DEPOSITION FOR GAPFILL Public/Granted day:2014-05-15
Information query
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