A method of providing a via hole and routing structure includes: providing a substrate wafer having recesses and blind holes provided in the surface of the wafer; providing an insulating layer in the recesses and holes; metallizing the holes and recesses; and removing the oxide layer in the bottom of the holes to provide contact between the back side and the front side of the wafer. A semiconductor device, including a substrate having at least one metallized via extending through the substrate and at least one metallized recess forming a routing together with the via. There is an oxide layer on the front side field and on the back side field. The metal in the recess and the via is flush with the oxide on the field on at least the front side, whereby a flat front side is provided. The thickness of the semiconductor device is