Invention Grant
US09355934B2 Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
有权
提供集成电路的方法和装置，其具有带凹入连接器的再分配层
- Patent Title: Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
- Patent Title (中): 提供集成电路的方法和装置，其具有带凹入连接器的再分配层
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Application No.: US14254434Application Date: 2014-04-16
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Publication No.: US09355934B2Publication Date: 2016-05-31
- Inventor: David Pratt
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00
Abstract:
A method of making a semiconductor die includes forming a trench around a conductive stud extending from the first side to a second side of a substrate to expose a portion of the stud and then forming a conductive layer inside the trench and in electrical contact with the stud.
Public/Granted literature
- US20140225254A1 METHOD AND APPARATUS PROVIDING INTEGRATED CIRCUIT HAVING REDISTRIBUTION LAYER WITH RECESSED CONNECTORS Public/Granted day:2014-08-14
Information query
IPC分类:
