Invention Grant
US09355973B2 Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices
有权
封装半导体器件，封装半导体器件的方法和PoP器件
- Patent Title: Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices
- Patent Title (中): 封装半导体器件，封装半导体器件的方法和PoP器件
-
Application No.: US14531916Application Date: 2014-11-03
-
Publication No.: US09355973B2Publication Date: 2016-05-31
- Inventor: Po-Hao Tsai , Jui-Pin Hung , Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/78 ; H01L23/00 ; H01L23/498 ; H01L25/10 ; H01L23/538 ; H01L23/31
Abstract:
Packaged semiconductor devices, methods of packaging semiconductor devices, and package-on-package (PoP) devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming through-package vias (TPVs) over a carrier, and coupling a semiconductor device to the carrier. The semiconductor device includes contact pads disposed on a surface thereof and an insulating material disposed over the contact pads. A molding material is formed over the carrier between the TPVs and the semiconductor device. Openings are formed in the insulating material using a laser drilling process over the contact pads, and a redistribution layer (RDL) is formed over the insulating material and the openings in the insulating material. A portion of the RDL is coupled to a top surface of each of the contact pads.
Public/Granted literature
- US20150050779A1 Packaged Semiconductor Devices, Methods of Packaging Semiconductor Devices, and PoP Devices Public/Granted day:2015-02-19
Information query
IPC分类:
