Invention Grant
- Patent Title: Method of manufacture of chalcogenide-based photovoltaic cells
- Patent Title (中): 基于硫族化物的光伏电池的制造方法
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Application No.: US13096316Application Date: 2011-04-28
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Publication No.: US09356177B2Publication Date: 2016-05-31
- Inventor: Todd R. Bryden , Jeffrey L. Fenton, Jr. , Gary E. Mitchell , Kirk R. Thompson , Michael E. Mills , David J. Parrillo
- Applicant: Todd R. Bryden , Jeffrey L. Fenton, Jr. , Gary E. Mitchell , Kirk R. Thompson , Michael E. Mills , David J. Parrillo
- Applicant Address: US MI Midland
- Assignee: Dow Global Technologies LLC
- Current Assignee: Dow Global Technologies LLC
- Current Assignee Address: US MI Midland
- Main IPC: H01L31/0264
- IPC: H01L31/0264 ; H01L31/0749 ; C23C14/06 ; C23C14/34 ; H01L21/02 ; H01L31/032
Abstract:
The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
Public/Granted literature
- US20110277840A1 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS Public/Granted day:2011-11-17
Information query
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