Invention Grant
- Patent Title: Magnetic tunneling junction devices, memories, memory systems, and electronic devices
-
Application No.: US14618534Application Date: 2015-02-10
-
Publication No.: US09356228B2Publication Date: 2016-05-31
- Inventor: Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- Applicant: Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0079627 20110810
- Main IPC: H01L21/14
- IPC: H01L21/14 ; H01L43/08 ; H01L43/10 ; G06F13/16 ; H01L43/02
Abstract:
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
Public/Granted literature
- US20150155477A1 MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES Public/Granted day:2015-06-04
Information query
IPC分类:
