Invention Grant
US09356595B2 Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with collector-side base driven, diode-mode turn-on, double base short at initial turn-off, and two base junctions clamped by default
有权
双向双基极双极结晶体管器件，操作，电路和系统，具有集电极侧基极驱动，二极管模式导通，初始关断时双基极短路，以及默认钳位的两个基极接点
- Patent Title: Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with collector-side base driven, diode-mode turn-on, double base short at initial turn-off, and two base junctions clamped by default
- Patent Title (中): 双向双基极双极结晶体管器件，操作，电路和系统，具有集电极侧基极驱动，二极管模式导通，初始关断时双基极短路，以及默认钳位的两个基极接点
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Application No.: US14792262Application Date: 2015-07-06
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Publication No.: US09356595B2Publication Date: 2016-05-31
- Inventor: William C. Alexander , Richard A. Blanchard
- Applicant: Ideal Power Inc.
- Applicant Address: US TX Austin
- Assignee: IDEAL POWER INC.
- Current Assignee: IDEAL POWER INC.
- Current Assignee Address: US TX Austin
- Agency: Groover & Associates PLLC
- Agent Gwendolyn Groover; Robert Groover
- Main IPC: H02M1/088
- IPC: H02M1/088 ; H03K17/66 ; H02M3/158 ; H01L29/739 ; H01L29/08 ; H01L29/16 ; H01L29/737 ; H02M7/797 ; H03K3/012 ; H03K17/687 ; H01L29/06 ; H01L29/10 ; H01L29/73 ; H02M11/00 ; H01L29/732 ; H03K17/60 ; H01L29/417 ; H01L29/423
Abstract:
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
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