Method for manufacturing an integrated MEMS device

Invention Grant

US09359193B2 Method for manufacturing an integrated MEMS device 有权

Title translation: 集成MEMS器件的制造方法

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Patent Title: Method for manufacturing an integrated MEMS device
Patent Title (中): 集成MEMS器件的制造方法
Application No.: US14165752

Application Date: 2014-01-28
Publication No.: US09359193B2

Publication Date: 2016-06-07
Inventor: Jerwei Hsieh
Applicant: Asia Pacific Microsystems, Inc.
Applicant Address: TW Hsinchu
Assignee: Asia Pacific Microsystems, Inc.
Current Assignee: Asia Pacific Microsystems, Inc.
Current Assignee Address: TW Hsinchu
Agency: Kamrath IP Lawfirm, P.A.
Agent Alan D. Kamrath
Priority: TW102201843U 20130128; TW102127210A 20130730
Main IPC: H01L21/4763
IPC: H01L21/4763 ; B81C1/00 ; B81B7/00

Method for manufacturing an integrated MEMS device

Abstract:

An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.

Abstract(Chinese):

提供集成的MEMS器件及其制造方法。在制造方法中，牺牲层用于集成MEMS晶片和电路晶片。本发明的优点包括防止电路晶片上的膜在加工过程中被损坏。通过制造方法，可以使用机械和热稳定的结构材料，例如：单晶硅和多晶硅。制造的集成MEMS器件也可以具有高填充因子的平面顶表面形貌的优点。该制造方法特别适用于制造MEMS阵列器件。

Public/Granted literature

US20150274514A1 Integrated Mems Device and Its Manufacturing Method Public/Granted day:2015-10-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）