Invention Grant
- Patent Title: Method of forming a nano-structure
- Patent Title (中): 形成纳米结构的方法
-
Application No.: US13822075Application Date: 2010-10-21
-
Publication No.: US09359195B2Publication Date: 2016-06-07
- Inventor: Peter Mardilovich , Qingqiao Wei , Anthony M. Fuller
- Applicant: Peter Mardilovich , Qingqiao Wei , Anthony M. Fuller
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: Dierker & Associates, P.C.
- International Application: PCT/US2010/053572 WO 20101021
- International Announcement: WO2012/054042 WO 20120426
- Main IPC: B81C1/00
- IPC: B81C1/00 ; C25D1/00 ; C25D11/02 ; C25D11/12 ; C25D11/18 ; C25D11/26 ; C25D11/04 ; B82Y40/00

Abstract:
Nano-structure includes a substrate and a non-oxidized portion of a metal layer (having an expansion coefficient, during oxidation, that is more than 1) on the substrate. An oxide layer is formed on the non-oxidized portion. A plurality of metal oxide nano-pillars is grown from the oxide layer. Each nano-pillar is grown through a plurality of pores defined in a template. A space is defined between adjacent nano-pillars. A continuous metal oxide cap layer is over the nano-pillars and over, but not in, the space between adjacent nano-pillars. The cap layer is formed from end portions of the nano-pillars that merge together over a template surface. The cap layer is in contact with all of the nano-pillars. The oxide layer, the nano-pillars, and the oxide cap layer are formed from anodization of portions of the metal layer.
Public/Granted literature
- US20130171418A1 METHOD OF FORMING A NANO-STRUCTURE Public/Granted day:2013-07-04
Information query