Invention Grant
- Patent Title: Method for manufacturing a graphene layer
- Patent Title (中): 石墨烯层的制造方法
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Application No.: US13939412Application Date: 2013-07-11
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Publication No.: US09359210B2Publication Date: 2016-06-07
- Inventor: Chia-Hung Huang , Sung-Mao Chiu , Chung-Jen Chung , Bo-Hsiung Wu
- Applicant: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE
- Applicant Address: TW Kaohsiung
- Assignee: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE
- Current Assignee: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE
- Current Assignee Address: TW Kaohsiung
- Agency: Jackson IPG PLLC
- Agent Demian K. Jackson
- Priority: TW102114278A 20130422
- Main IPC: C01B31/04
- IPC: C01B31/04
Abstract:
A method for manufacturing a graphene layer includes performing a sputtering process to form a graphite layer on a substrate, and performing a lithography process on the graphite layer for thinning the graphite layer and thereafter making the graphite layer thinned to become a graphene layer.
Public/Granted literature
- US20140311894A1 METHOD FOR MANUFACTURING A GRAPHENE LAYER Public/Granted day:2014-10-23
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