Invention Grant
- Patent Title: Gas barrier film, process for production of gas barrier film, and electronic device
- Patent Title (中): 阻气膜,阻气膜的制造方法以及电子装置
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Application No.: US13810544Application Date: 2011-07-07
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Publication No.: US09359505B2Publication Date: 2016-06-07
- Inventor: Hiromoto Ii , Satoshi Ito , Makoto Honda , Kiyoshi Oishi , Issei Suzuki
- Applicant: Hiromoto Ii , Satoshi Ito , Makoto Honda , Kiyoshi Oishi , Issei Suzuki
- Applicant Address: JP Tokyo
- Assignee: KONICA MINOLTA HOLDINGS, INC.
- Current Assignee: KONICA MINOLTA HOLDINGS, INC.
- Current Assignee Address: JP Tokyo
- Agency: Lucas & Mercanti, LLP
- Priority: JP2010-167914 20100727; JP2010-257660 20101118; JP2010-285519 20101222; JP2011-004588 20110113
- International Application: PCT/JP2011/065568 WO 20110707
- International Announcement: WO2012/014653 WO 20120202
- Main IPC: C09D1/00
- IPC: C09D1/00 ; B05D5/00 ; C08J7/12 ; C08J7/04

Abstract:
The present invention provides a gas barrier film having high barrier properties, folding/bending resistance and smoothness and excellent cutting suitability, and also provides an organic photoelectric conversion element equipped with the gas barrier film. The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face of at least one surface of a base material (2), wherein the gas barrier layer unit (5) comprises a first barrier layer (3) formed by a chemical vapor deposition method and a second barrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) to form a coating film and modifying the coating film, and wherein the second barrier layer (4) has an unmodified region (4B) on a side facing the base material and a modified region (4A) on a side facing the front layer of the film.
Public/Granted literature
- US20130115423A1 GAS BARRIER FILM, PROCESS FOR PRODUCTION OF GAS BARRIER FILM, AND ELECTRONIC DEVICE Public/Granted day:2013-05-09
Information query
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