The purpose of the present invention is to provide a gas barrier film which exhibits excellent storage stability, in particular, excellent storage stability even under harsh conditions (high temperature and high moisture conditions).The present invention pertains to a gas barrier film which comprises a substrate and a silicon-containing film that has a chemical composition represented by the following Chemical Formula (1) and that satisfies the relationships represented by Mathematical Formula 1 and Mathematical Formula 2: [Mathematical Formula 1] 0.001≦Y/(X+Y)≦0.25  Mathematical Formula 1 3.30≦3Y+2X≦4.80  Mathematical Formula 2 in Chemical Formula (1), M represents at least one selected from a group consisting of the elements belonging to Group 2 to Group 14 in the long period type Periodic Table (with the proviso that, silicon and carbon are excluded), x represents an atomic ratio of oxygen relative to silicon, y represents an atomic ratio of nitrogen relative to silicon, and z represents an atomic ratio of M relative to silicon, which is 0.01 to 0.3, and in Mathematical Formula 1 and Mathematical Formula 2, X=x/(1+(az/4)), and Y=y/(1+(az/4)) (with the proviso that, a is the valency of the element M).