Invention Grant
- Patent Title: Low temperature deposition apparatus
- Patent Title (中): 低温沉积装置
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Application No.: US13602668Application Date: 2012-09-04
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Publication No.: US09359667B2Publication Date: 2016-06-07
- Inventor: Kyul Han , O-Hyun Kwon , Dong-Woo Shin , Seul-Ong Kim , Byoung-Ki Choi
- Applicant: Kyul Han , O-Hyun Kwon , Dong-Woo Shin , Seul-Ong Kim , Byoung-Ki Choi
- Applicant Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2012-0002551 20120109
- Main IPC: C23C14/12
- IPC: C23C14/12 ; C23C14/20 ; C23C14/24 ; C23C14/54
Abstract:
A low temperature deposition device according to the present invention includes: a thermal deposition source unit spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam; and a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit to cool the deposition beam. According to the present invention, the inorganic deposition beam of low temperature is deposited on the substrate to form the inorganic metal layer of low temperature so that the damage to the organic layer may be minimized when forming the inorganic metal layer of low temperature on the organic layer.
Public/Granted literature
- US20130174782A1 Low Temperature Deposition Apparatus Public/Granted day:2013-07-11
Information query
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