Invention Grant
- Patent Title: Method of loading a charge of polysilicon into a crucible
- Patent Title (中): 将多晶硅装入坩埚的方法
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Application No.: US13685323Application Date: 2012-11-26
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Publication No.: US09359691B2Publication Date: 2016-06-07
- Inventor: Umberto Martini , Luigi Bonanno , Paolo Collareta , Maria Porrini
- Applicant: MEMC Electronic Materials S.p.A.
- Applicant Address: IT Novara
- Assignee: MEMC Electronic Materials SpA
- Current Assignee: MEMC Electronic Materials SpA
- Current Assignee Address: IT Novara
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B15/02
- IPC: C30B15/02 ; C30B15/10 ; C30B11/04 ; C30B29/06
Abstract:
A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.
Public/Granted literature
- US20140060422A1 METHOD OF LOADING A CHARGE OF POLYSILICON INTO A CRUCIBLE Public/Granted day:2014-03-06
Information query
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