Invention Grant
- Patent Title: Semiconductor device and data generation method
- Patent Title (中): 半导体器件和数据生成方法
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Application No.: US13439289Application Date: 2012-04-04
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Publication No.: US09360381B2Publication Date: 2016-06-07
- Inventor: Naoya Arisaka , Takayasu Ito , Masashi Horiguchi
- Applicant: Naoya Arisaka , Takayasu Ito , Masashi Horiguchi
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2011-089080 20110413
- Main IPC: G01K7/01
- IPC: G01K7/01 ; G01K15/00 ; G05F3/30

Abstract:
A semiconductor device with improved temperature detection accuracy includes a coefficient calculation circuitry which calculates a plurality of N-th order coefficients, where N is an integer equal to or greater than one, of a correction function as an N-th order approximation of a characteristic function which relates temperature data measured by the temperature sensor and the actual temperature. The coefficient calculation circuitry uses N+1 pieces of the temperature data including a theoretical value at absolute zero in the characteristic function and N measured values of the temperature data measured by the temperature sensor unit at N points of temperature. A corrected temperatures are output using the correction function with the calculated coefficients and measured temperature values.
Public/Granted literature
- US20120265473A1 SEMICONDUCTOR DEVICE AND DATA GENERATION METHOD Public/Granted day:2012-10-18
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