Invention Grant
US09360443B2 Nano scale resonator, nano scale sensor, and fabrication method thereof
有权
纳米级谐振器，纳米级传感器及其制造方法
- Patent Title: Nano scale resonator, nano scale sensor, and fabrication method thereof
- Patent Title (中): 纳米级谐振器，纳米级传感器及其制造方法
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Application No.: US13668760Application Date: 2012-11-05
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Publication No.: US09360443B2Publication Date: 2016-06-07
- Inventor: Moon Chul Lee , Duck Hwan Kim , In Sang Song , Jea Shik Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2012-0016181 20120217
- Main IPC: G01N27/04
- IPC: G01N27/04 ; H03H9/24 ; H03H3/007 ; H03H9/02
Abstract:
A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.
Public/Granted literature
- US20130214876A1 NANO SCALE RESONATOR, NANO SCALE SENSOR, AND FABRICATION METHOD THEREOF Public/Granted day:2013-08-22
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