Invention Grant
- Patent Title: Bonding of heterogeneous material grown on silicon to a silicon photonic circuit
- Patent Title (中): 在硅上生长的异质材料与硅光子电路的结合
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Application No.: US14577938Application Date: 2014-12-19
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Publication No.: US09360623B2Publication Date: 2016-06-07
- Inventor: John E. Bowers , Jock Bovington
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Billion & Armitage
- Agent Michael A. Collins
- Main IPC: G02B6/13
- IPC: G02B6/13 ; G02B6/12
Abstract:
A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.
Public/Granted literature
- US20150177458A1 BONDING OF HETEROGENEOUS MATERIAL GROWN ON SILICON TO A SILICON PHOTONIC CIRCUIT Public/Granted day:2015-06-25
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