Invention Grant
US09360662B2 Optical measurement system and method for measuring critical dimension of nanostructure
有权
用于测量纳米结构临界尺寸的光学测量系统和方法
- Patent Title: Optical measurement system and method for measuring critical dimension of nanostructure
- Patent Title (中): 用于测量纳米结构临界尺寸的光学测量系统和方法
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Application No.: US13656180Application Date: 2012-10-19
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Publication No.: US09360662B2Publication Date: 2016-06-07
- Inventor: Sergey Nikolaevich Koptyaev , Maxim Vladimirovich Ryabko , Michael Nikolaevich Rychagov
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: RU2011142372 20111020; KR10-2012-0085388 20120803
- Main IPC: G02B21/36
- IPC: G02B21/36 ; G03F7/20 ; B82Y35/00 ; H04N7/18

Abstract:
An optical measurement system for measuring a critical dimension having a nanostructured surface including a nanostructure formed on a plane. The optical measurement system includes an image recording module including a microscope optical system which records a defocused image having an nonuniform degree of defocusing with respect to the nanostructured surface, an optical scheme parameter control module which sets and outputs to the microscope optical system optical scheme parameters for the microscope optical system, an image calculation module which receives receiving the optical scheme parameters set by the optical scheme parameter control module and calculates an image of the nanostructured surface, and a comparison module which compares the defocused image recorded by the image recording module and the image calculated by the image calculation module.
Public/Granted literature
- US20130107030A1 OPTICAL MEASUREMENT SYSTEM AND METHOD FOR MEASURING CRITICAL DIMENSION OF NANOSTRUCTURE Public/Granted day:2013-05-02
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