Invention Grant
- Patent Title: System and method for lithography patterning
- Patent Title (中): 光刻图案的系统和方法
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Application No.: US13411245Application Date: 2012-03-02
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Publication No.: US09360778B2Publication Date: 2016-06-07
- Inventor: Li-Jui Chen , Fu-Jye Liang , Hsueh-Hung Wu
- Applicant: Li-Jui Chen , Fu-Jye Liang , Hsueh-Hung Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03B27/58 ; G03B27/32 ; G03F9/00

Abstract:
Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.
Public/Granted literature
- US20130229638A1 SYSTEM AND METHOD FOR LITHOGRAPHY PATTERNING Public/Granted day:2013-09-05
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