Invention Grant
- Patent Title: Temperature accelerated stress time
- Patent Title (中): 温度加速应力时间
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Application No.: US14510771Application Date: 2014-10-09
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Publication No.: US09361030B2Publication Date: 2016-06-07
- Inventor: Daniel E. Tuers , Dana Lee , Henry Chin , Abhijeet Manohar
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Priority: IN4051/CHE/2014 20140820
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06

Abstract:
A memory system or flash card may be exposed to elapsed time or increased temperature conditions which may degrade the memory. For example, extended time periods or high temperature conditions may hinder data retention in a memory device. An estimate of elapsed time and temperature conditions may be useful for memory management. An algorithm that periodically identifies one or more sentinel blocks in the memory device and measures the data retention shift in those sentinel blocks can calculate a scalar value that approximates the combined effect of elapsed time and/or temperature conditions.
Public/Granted literature
- US20160054937A1 TEMPERATURE ACCELERATED STRESS TIME Public/Granted day:2016-02-25
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