Invention Grant
- Patent Title: Multi-channel, multi-bank memory with wide data input/output
- Patent Title (中): 具有宽数据输入/输出的多通道,多存储存储器
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Application No.: US14228899Application Date: 2014-03-28
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Publication No.: US09361973B2Publication Date: 2016-06-07
- Inventor: Dinesh Maheshwari
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA San Jose
- Main IPC: G11C7/18
- IPC: G11C7/18 ; G11C11/413 ; G11C7/10 ; G11C11/419 ; G11C5/02 ; G11C8/12

Abstract:
An integrated circuit (IC) can include M memory banks, where M is greater than 2, and each memory bank is separately accessible according to a received address value; N channels, where N is greater than 2, and each channel includes its own a data connections, address connections, and control input connections for executing a read or write access to one of the memory banks in synchronism with a clock signal; and a controller subsystem configured to control accesses between the channels and the memory banks, including up to an access on every channel on consecutive cycles of the clock signal.
Public/Granted literature
- US20150117091A1 MULTI-CHANNEL, MULTI-BANK MEMORY WITH WIDE DATA INPUT/OUTPUT Public/Granted day:2015-04-30
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